Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures

Localization of two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures

We report strong localization of two-dimensional electron gas in LaAlO3/SrTiO3 epitaxial thin-film heterostructures grown on (LaAlO3)0.3-(Sr2AlTaO3)0.7 substrates by using pulsed laser deposition with in situ reflection high-energy electron diffraction. Using longitudinal and transverse magnetotransport measurements, we have determined that disorder at the interface influences the conduction be...

Two-dimensional electron gas in AlGaN/GaN heterostructures

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron g...

First-principles studies of a two-dimensional electron gas at the interface in ferroelectric oxide heterostructures

13.1 Influence of MOCVD Growth Conditions on the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures

The influence of MOCVD growth conditions (carrier gas, growth temperature, and V/III ratio) on the AlGaN barrier and the corresponding 2DEG for AlGaN/GaN heterostructures grown on 150 mm silicon is investigated. Hall mobility 2200 cm 2 /V.s, with sheet carrier concentration 8.7e10 12 cm -2 and sheet resistance 326 Ohm/sq, is obtained for AlGaN grown in N2 ambient and with high V/III ratios.